Toshiba Launches 80V N-Channel Power MOSFET Using Its Latest Generation Process to Improve Efficiency in AI Data Centers

KAWASAKI, Japan, June 30 (Bernama) -- Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “TPM1R408RH,” an 80V N-channel power MOSFET fabricated using U-MOS11-H, Toshiba’s latest-generation process[1]. The MOSFET targets applications such as switched-mode power supplies for industrial equipment used in AI data centers and communications base stations. Shipments start today.

The continuing expansion in AI processing has increased power demand in data centers, while advances in communications infrastructure have further intensified requirements for higher efficiency, smaller size (higher power density), and lower electromagnetic interference (EMI) in switched-mode power supplies. As power losses directly affect system power consumption, heat generation, and cooling load, it is important to deploy power semiconductors with characteristics that support a balanced reduction in conduction and switching losses and that contribute to overall system optimization, including improved EMI suppression, thermal design, and ease of mounting.