Toshiba Launches 3300V SiC MOSFET Module with High Surge Current Capability that Helps Improve Reliability of Industrial Equipment

KAWASAKI, Japan, Sept 24 (Bernama) -- Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has expanded its lineup with the launch of “IX800FXF2YMS4,” a dual SiC MOSFET module for industrial equipment, including railway vehicles, renewable energy power generation systems and power conversion systems. The new module features Toshiba’s third-generation silicon carbide (SiC) MOSFET chips, a drain-source voltage rating of 3300V and a drain current (DC) rating of 800A. Its specifications state an I2t limit value in the diode section, an indicator of surge current capability.

Manufacturers of industrial equipment, including railway traction inverters and converters, renewable energy power generation systems, and industrial motor control equipment, must constantly meet increasing demands for higher efficiency, smaller size and improved reliability. In these systems, large surge currents that can flow through power semiconductor modules in abnormal conditions must be countered by a sufficient surge current capability.